Hall effect

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1.A Hall effect transducer can be used to measure

a. Displacement, temperature and magnetic flux
   

b. Displacement, position and velocity
   

c. Position, magnetic flux and pressure
   

d. Displacement, position and magnetic flux

2.Assertion (A) : Hall crystal can be used as a multiplier of two signals.

Reason (R) : Hall voltage is proportional to the currents or voltages applied in perpendicular directions across the Hall crystal.

a. Both A and R are true and R is the correct explanation of A
   

b. Both A and R are true but R is NOT the correct explanation of A
   

c. A is true but R is false
   

d. A is false but R is true

3.The Hall constant in a p - Si bar is given by 5 × 10 cm3/Coulomb. The hole concentration in the bar is given by

a. 1.00 × 10¹⁵15/cm³
   

b. 1.25 × 10¹⁵/cm³
   

c. 1.50 × 10¹⁵/cm²
   

d. 1.6 × 10¹⁵/cm³

4.In an extrinsic semiconductor, the Hall coefficient RH

a. increases with increase of temperature
   

b. decreases with increase of temperature
   

c. is independent of the change of temperature
   

d. changes with the change of magnetic field

5.Which of the following statements relate to the Hall effect?

1. A potential difference is developed across a current-carrying metal strip when the strip is placed in a transverse magnetic field.

2. The Hall effect is very weak in metals but is large in semiconductors.

3. The Hall effect is very weak in semiconductors but is large in metals.

4. it is applied in the measurement of the magnetic field intensity.

a. 1, 2 and 3
   

b. 2 and 4
   

c. 1, 3 and 4
   

d. 1, 2 and 4

6.Consider a semiconductor bar having square cross-section. Assume that holes drift in the positive x-direction and a magnetic field is applied perpendicular to the direction in which holes drift. The sample will show

a. a negative resistance in positive ydirection
   

b. a positive voltage in positive ydirection
   

c. a negative voltage in positive ydirection
   

d. a magnetic field in positive y-direction

7.A semiconductor specimen of breadth d, width w and carrying current I is placed in a magnetic field B to develop Hall voltage VH in a direction perpendicular to I and B. VH is NOT proportional to

a. B
   

b. I
   

c. 1/w
   

d. 1/d

8.Assertion (A): The concentration measured by Hall effect does not have much significance if the semiconductor is non-homogeneously doped.

Reason (R): The current density is uniform throughout the thickness of the semiconductor.

a. Both A and R are individually true and R is the correct explanation of A
   

b. Both A and R are individually true but R is not the correct explanation of A
   

c. A is true but R is false
   

d. A is false but R is true

9.Which of the following can be determined by using a Hall crystal?

1. Concentration of holes in a p-type semiconductor.

2. Concentration of electrons in an n-type semiconductor.

3. Temperature of the setup with any type of semiconductor.

4. Diffusion constant and life-time of minority carriers of any type of semiconductor.

Select the correct answer using the code given below

a. Only 1 and 2
   

b. 1, 2 and 4
   

c. Only 3 and 4
   

d. Only 2 and 4

10.As per Hall effect, if any specimen carrying a current I is placed in a transverse magnetic field B, then an electric field E is induced in the specimen in the direction

a. parallel to I
   

b. perpendicular to B and parallel to I
   

c. parallel to I and B
   

d. perpendicular to both I and B

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