Special Electronic Devices

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1.Match List I (Devices) with list II (Characteristics) and select the correct answer:
List I
A. BJT
B. MOSFET
C. Tunnel diode
D. Zener diode
List II
1. Voltage controlled negative resistance
2. High current gain
3. Voltage regulation
4. High input impedance

........A B C D

a. 1 4 2 3
   

b. 2 4 1 3
   

c. 2 3 1 4
   

d. 1 3 2 4

2.SCR turns OFF from conducting state to blocking state on

a. Reducing gate current
   

b. Reversing gate voltage
   

c. Reducing anode current below holding current value
   

d. Applying ac to the gate

3.Match List I with List II and select the correct answer:
List I (Devices)
A. Silicon diode
B. Germanium diode
C. LED
D. PIN diode
List II (Property)
1. High frequency applications
2. Very low reverse bias saturation current
3. Low forward bias voltage drop
4. Cut-off wavelength

........A B C D

a. 1 3 4 2
   

b. 2 4 3 1
   

c. 1 4 3 2
   

d. 2 3 4 1

4.



The above graph depicts

a. drain characteristic of a MOSFET
   

b. drain characteristic of an IGBT
   

c. volt-ampere characteristic of a triac
   

d. volt-ampere characteristic of an SCR

5.An SCR triggered by a current pulse through its gate can be turned off by

a. giving another pulse of the same polarity to the gate
   

b. by giving pulse to the cathode
   

c. by giving pulse to the anode
   

d. by reversing the polarity of anode and cathode voltage

6.Match List I (Operating point on the I -V characteristic) with List II (Devices) and select the correct answer:
List I
A. 1st quadrant
B. 2nd quadrant
C. 3rd quadrant
D. 4th quadrant
List II
1. Solar cell
2. Photo detector with high sensitivity
3. Photo detector with low sensitivity
4. Rectifier diode
Codes;

........A B C D

a. 4 3 2 1
   

b. 3 4 2 1
   

c. 3 4 1 2
   

d. 4 3 1 2

7.Match list I with list II and select the correct answer:
List I
A. Gunn Diode
B. Solar Cell
C. MOSFET
D. SCR
List II
1. Junction less device
2. Single junction device
3. Double junction device
4. Triple junction device

........A B C D

a. 1 2 3 4
   

b. 3 4 1 2
   

c. 1 4 3 2
   

d. 3 2 1 4

8.Match List I with List II and select the correct answer :
List I (Diode type)
A. Zener Diode
B. Gunn Diode
C. Schottky
D. Diode
E. Tunnel Diode
List H (Important properties)
1. Negative resistance device fabricated using semiconductors like Si, Ga, As, Ge etc. can be operated at a frequency of 10 GHz
2. Quantum mechanical tunnelling with very thin depletion layers under reverse bias operated as a reference voltage sources
3. Negative conductance device, operates on the principle of transfer of electron from one region of conduction band to another
4. Metal-semiconductor diode, have rectification properties

........A B C D

a. 2 4 3 1
   

b. 1 3 4 2
   

c. 2 3 4 1
   

d. 1 4 3 2

9.An LED made using GaAs emits radiation in

a. Visible region
   

b. Ultraviolet region
   

c. Infra red region
   

d. Microwave frequency region

10.The light emitting diode (LED) emits light of a particular colour because

a. It is fabricated from a fluoroscent material
   

b. Transition between energy levels of the carriers takes place while crossing the p-n junction
   

c. Heat generated in the diode is converted into light
   

d. The band gap of the semi-conductor material used in the fabrication of the diode is equal to the energy hv of the light photon

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